Electrical and optical properties of In-doped CdTe after Cd-rich annealing
作者： E. Belas , R. Grill , A.L. Toth , J. Franc , P. Moravec
DOI: 10.1109/NSSMIC.2004.1466876
关键词: Electrical conductor 、 Doping 、 Surface layer 、 Electron mobility 、 Annealing (metallurgy) 、 Hall effect 、 Photoluminescence 、 Materials science 、 Cadmium telluride photovoltaics 、 Analytical chemistry
摘要: The electrical and optical properties of the conductive n-type surface layer created in high resistivity CdTe:In by annealing at 400-600degC under Cd-rich overpressure was investigated. Slightly compensated donor level with concentration ND~1.3times10 16 cm-3 ionization energy ED~10 meV obtained from Hall effect measurement electron mobility reaches a maximum 1times104 cm2/Vs 35 K after 600degC. Purification confirmed photoluminescence measurement, where decreasing emission lines related to alkali silver acceptors were observed. line 1.854 eV, which is expected characterize material, detected as grown samples well
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