Pressure sensor using p-type polycrystalline diamond piezoresistors
作者： Akira Yamamoto , Norio Nawachi , Takahiro Tsutsumoto , Akira Terayama
DOI: 10.1016/J.DIAMOND.2004.09.001
关键词: Crystallite 、 Doping 、 Chemical vapor deposition 、 Materials science 、 Diamond 、 Diaphragm (mechanical device) 、 Mineralogy 、 Raman spectroscopy 、 Piezoresistive effect 、 Pressure sensor 、 Optoelectronics
摘要: Prototype pressure sensor was fabricated using piezoresistive effect of boron-doped diamond. Undoped and polycrystalline diamonds were deposited on Si substrate hot filament chemical vapor deposition (CVD) method. The diamond an isolation layer the undoped film. Selective carried out by metal mask, 30-μm width patterning possible. In order to improve a sensitivity sensor, diaphragm thickness boron doping depth varied from 62 5 μm 2 0.5 μm, respectively. sensors evaluated in ranges room temperature 250 °C 0 0.07 M Pa applied pressure.
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