Built-in self test of CMOS-MEMS accelerometers
作者： N. Deb , R.D. Blanton
DOI: 10.1109/TEST.2002.1041864
关键词: Sense (electronics) 、 Integrated circuit layout 、 Built-in self-test 、 Electronic engineering 、 Manufacturing process 、 MOSFET 、 Engineering 、 Accelerometer 、 Circuit design 、 Microelectromechanical systems
摘要: A built-in self-test technique for MEMS that is applicable to symmetrical microstructures described. combination of existing layout features and additional circuitry used make measurements from symmetrically-located points. In addition the normal sense output, outputs are detect presence asymmetry caused by local, hard-to-detect defects. Simulation results an accelerometer reveal our approach able distinguish misbehavior resulting local defects manufacturing process variations.
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