The structure and composition of rf reactively sputtered MoSx films
作者： K. Reichelt , G. Mair
DOI: 10.1063/1.325014
关键词: Inorganic chemistry 、 Analytical chemistry 、 Sputtering 、 Substrate (electronics) 、 Materials science 、 Molybdenum 、 Torr 、 Hydrogen sulfide 、 Sticking coefficient 、 Molybdenum disulfide 、 Partial pressure
摘要: Molybdenum sulfide films have been deposited by reactive sputtering of molybdenum in a hydrogen sulfide/argon atmosphere and disulfide pure argon at substrate temperatures between room temperature 480 °C. The structure composition the determined as function partial pressure transmission electron microscopy (TEM) Rutherford ion backscattering, respectively. experiments showed that pressures above 2×10−4 Torr, MoSx had rhombohedral with 0
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