Facile process to clean PMMA residue on graphene using KrF laser annealing
作者： Hyeon Jun Hwang , Yongsu Lee , Chunhum Cho , Byoung Hun Lee
DOI: 10.1063/1.5051671
关键词: Laser annealing 、 Graphene 、 Residue (chemistry) 、 Materials science 、 Chemical engineering
摘要: Persistent PMMA residue formed during a graphene transfer has been culprit in the optimization of device performance. We demonstrated facile process to remove using pulsed KrF laser annealing system at H2/Ar ambient. 10min 248nm could as well methoxy and carboxyl function groups without causing noticeable damage graphene.
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