Measuring a property of a layer in multilayered structure

摘要: An apparatus measures a property of layer (such as the sheet resistance conductive or thermal conductivity dielectric that is located underneath layer) by performing following method: (1) focusing heating beam on heated region (also called “heated region”) (2) modulating power at predetermined frequency selected to be sufficiently low ensure least majority (preferably all) generated heat transfers out diffusion, and (3) measuring another (a) reflected region, (b) modulated in phase with modulation beam. The measurement act can used directly measure (per unit length) line formed patterning layer. Acts (1)-(3) repeated during fabrication semiconductor wafer, each number regions line, any change indicates corresponding line. When changes more than amount (e.g. 10%), process parameter controls changed return normal next wafer. Moreover, measured, monitored for beyond limit scan across if known.