Optical method for the characterization of the electrical properties of semiconductors and insulating films
作者： Humphrey J. Maris
DOI:
关键词: Optoelectronics 、 Light source 、 Surface charge 、 Absorption (electromagnetic radiation) 、 Dopant 、 Materials science 、 Carrier lifetime 、 Electric field 、 Characterization (materials science) 、 Semiconductor
摘要: A method for characterizing a sample includes the steps of (a) providing semiconductor material; (b) applying at least one an electric field, pulsed or cw light source, change in temperature and/or pump pulse intensity to (c) absorbing pulses portion material and measuring changes optical constants as indicated by probe applied some time t following absorption pulses; (e) associating measured with surface charge, dopant concentration, trap density, minority carrier lifetime.
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