Non-volatile memory devices, methods of manufacturing and methods of operating the same
作者： Deok-kee Kim , Choong-rae Cho
DOI:
关键词: Layer (electronics) 、 Electrode 、 Engineering 、 Non-volatile memory 、 Data access layer 、 The Intersect 、 Computer hardware 、 Acoustics 、 Intersection
摘要: A non-volatile memory device includes: at least one horizontal electrode; vertical electrode disposed to intersect the an intersection region; data layer region and having a conduction-insulation transition property; anti-fuse connected in series with layer.
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