LMS algorithm for programming an analogue memory cell
作者： Jesús de la Cruz-Alejo , L. Noé Oliva-Moreno
DOI: 10.1080/00207217.2012.727345
关键词: Pulse-density modulation 、 CMOS 、 Electronic engineering 、 Filter (video) 、 Signal 、 Least mean squares filter 、 Computer science 、 Piecewise 、 Finite impulse response 、 Memory cell
摘要: This article presents the optimal performance of a nonvolatile analogue memory cell fabricated in 1.2 µm CMOS process, which is programmed using LMS (least mean square) algorithm to implement an adaptive FIR filter used identify unknown signal. The store and update weight as charge floating gate pMOS transistor (FGMOS). Programming linear pulse density modulation scheme by means tunnelling hot injection electrons. behavior included programming method developed. performed very well, does not require signal be piecewise stationary, requires no manual operation other than selection step-size parameter.
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