Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

作者: Kai-De Liang , Chi-Hsin Huang , Chih-Chung Lai , Jian-Shiou Huang , Hung-Wei Tsai

DOI: 10.1021/AM502741M

关键词: Materials scienceTransmission electron microscopyMembraneNanotechnologyResistive switchingElectrochemistryMemristorNanocrystalResistive random-access memoryNanowire

摘要: CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature its resistive switching has been demonstrated. The characteristic exhibits forming-free low electric-field operation due to coexistence of significant amount defects Cu nanocrystals in the partially oxidized nanowires. detailed characteristics nanowire systems have investigated possible mechanisms are systematically proposed based on microstructural chemical analysis via transmission electron microscopy.

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