作者: Kai-De Liang , Chi-Hsin Huang , Chih-Chung Lai , Jian-Shiou Huang , Hung-Wei Tsai
DOI: 10.1021/AM502741M
关键词: Materials science 、 Transmission electron microscopy 、 Membrane 、 Nanotechnology 、 Resistive switching 、 Electrochemistry 、 Memristor 、 Nanocrystal 、 Resistive random-access memory 、 Nanowire
摘要: CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature its resistive switching has been demonstrated. The characteristic exhibits forming-free low electric-field operation due to coexistence of significant amount defects Cu nanocrystals in the partially oxidized nanowires. detailed characteristics nanowire systems have investigated possible mechanisms are systematically proposed based on microstructural chemical analysis via transmission electron microscopy.