Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions
作者： U. Zaghloul , G. Papaioannou , F. Coccetti , P. Pons , R. Plana
DOI: 10.1016/J.MICROREL.2009.07.006
关键词: Silicon nitride 、 Capacitive sensing 、 Poole–Frenkel effect 、 Dielectric 、 Materials science 、 Electrical engineering 、 Plasma-enhanced chemical vapor deposition 、 Capacitor 、 Optoelectronics 、 Thin film 、 Electric field
摘要: Abstract The paper presents a systematic investigation of the dielectric charging and discharging process in silicon nitride thin films for RF-MEMS capacitive switches. SiN were deposited with high frequency (HF) low (LF) PECVD method different thicknesses. Metal–Insulator–Metal capacitors have been chosen as test structures while Charge/Discharge Current Transient has used to monitor current transients. reveals that LF material stored charge increases film thickness HF one it is not affected by thickness. dependence on electric field intensity was found follow Poole–Frenkel like law. Finally, both relaxation time increase intensity.
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