Structure dependent charging process in RF MEMS capacitive switches
作者： E. Papandreou , M. Lamhamdi , C.M. Skoulikidou , P. Pons , G. Papaioannou
DOI: 10.1016/J.MICROREL.2007.07.100
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摘要: … In conclusion it was shown that the dielectric charging in Si 3 N 4 , used in MEMS capacitive switches, is determined by both the deposition method and the dielectric film stress, intrinsic …
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