Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics
作者： J.S. Pan , R.S. Liu , Z. Zhang , S.W. Poon , W.J. Ong
DOI: 10.1016/J.SUSC.2006.01.029
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摘要: Abstract In situ X-ray photoelectron spectroscopy (XPS) and ex atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean H-terminated Si(0 0 1) Si(1 1 1) surfaces. The proceeds by first forming an initial CoSi 2 -like phase front Si substrate. With increasing Co coverage interfacial layer composition becomes richer in eventually a metallic film is formed top. Hydrogen termination surface did not suppress reaction Si. A pseudo-layer-by-layer mode proposed describe surfaces, while closed-packed small island occurs difference can be attributed increase mobility adatoms presence hydrogen.
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