Inspection guided overlay metrology

作者: Allen Park , Amir Widmann , Ellis Chang

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摘要: Inspection guided overlay metrology may include performing a pattern search in order to identify predetermined on semiconductor wafer, generating care area for all instances of the identifying defects within generated areas by an inspection scan each areas, wherein includes low-threshold or high sensitivity scan, sites wafer having measured error larger than selected specification utilizing defect technique, comparing location data identified one more locations are proximate sites, and sampling plan based locations.

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