Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition
作者： M. K. Behbehani , E. L. Piner , S. X. Liu , N. A. El-Masry , S. M. Bedair
DOI: 10.1063/1.124964
关键词:
摘要: We have recently reported the occurrence of phase separation in InxGa1−xN samples with x>0.25. Theoretical studies suggested that can phase-separate asymmetrically into a low InN% and an ordered high phase. In this letter, we report on existence simultaneous ordering these samples, was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) x-ray diffraction. Ordering imaging TEM-SAD.
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sci-hub.se 参考文章(11)
P. M. Kelly, Electron Diffraction in the Electron Microscope Macmillan Education UK. pp. 1- 77 ,(1975) , 10.1007/978-1-349-02595-4_1
P. Ruterana, G. Nouet, W. Van der Stricht, I. Moerman, L. Considine, Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 72, pp. 1742- 1744 ,(1998) , 10.1063/1.121170
D. Korakakis, K. F. Ludwig, T. D. Moustakas, Long range order in AlxGa1−xN films grown by molecular beam epitaxy Applied Physics Letters. ,vol. 71, pp. 72- 74 ,(1997) , 10.1063/1.119916
Michio Shimotomai, Akihiko Yoshikawa, Simultaneous phase separation and basal-plane atomic ordering in InxGa1−xN Applied Physics Letters. ,vol. 73, pp. 3256- 3258 ,(1998) , 10.1063/1.122736
N. A. El-Masry, E. L. Piner, S. X. Liu, S. M. Bedair, Phase separation in InGaN grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 72, pp. 40- 42 ,(1998) , 10.1063/1.120639
23_G B Stringfellow, GS Chen, Atomic ordering in III/V semiconductor alloys Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 2182- 2188 ,(1991) , 10.1116/1.585761
I‐hsiu Ho, G. B. Stringfellow, Solid phase immiscibility in GaInN Applied Physics Letters. ,vol. 69, pp. 2701- 2703 ,(1996) , 10.1063/1.117683
M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, L. F. Reitz, High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers Applied Physics Letters. ,vol. 60, pp. 2917- 2919 ,(1992) , 10.1063/1.106819
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Japanese Journal of Applied Physics. ,vol. 35, pp. L74- L76 ,(1996) , 10.1143/JJAP.35.L74
D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, M. Razeghi, AlGaN ultraviolet photoconductors grown on sapphire Applied Physics Letters. ,vol. 68, pp. 2100- 2101 ,(1996) , 10.1063/1.115597