Electrical and optical properties of reactively sputtered tungsten oxide films

摘要: Electrical and optical properties of reactively sputtered tungsten oxide films have been investigated in relation to the oxygen concentration sputtering atmosphere. The with 5200–6600 A thick were prepared under a constant pressure 5×10−3 Torr using mixture Ar 4–50% O2. resistivity spectral transmittance formed depend extremely on an atmosphere containing less than 13% O2 are semiconductive, 10−3–103 Ω cm, blue colored. more 16% transparent 107–1011 Ω cm. Optical band gap 8–50% is almost ranges 3.00–3.03 eV. carrier Hall mobility semiconductive refractive index insulating also measured. presence critical for formation e...