作者: Bjorn Marsen , Brian Cole , Eric L. Miller
DOI: 10.1016/J.SOLMAT.2007.08.008
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摘要: Abstract Polycrystalline tungsten oxide films of 1–1.2μm thickness were prepared by reactive sputtering at elevated substrate temperature (270 °C) and under different oxygen partial pressures in the range from 0.8 to 2.1 mTorr. At lowest pressure substoichiometric, showed increased disorder, exhibited photocurrents 0.6 mA/cm 2 1.8 V vs SCE 0.33 M H 3 PO 4 . 1.4 mTorr greater, stoichiometric WO produced which 2.4 mA/cm SCE. It has been determined that photoelectrochemical performance slightly substoichiometric is adversely affected changes optical properties, while severely suffer additionally poor carrier collection.