作者: L.L López , J Portelles , J.M Siqueiros , G.A Hirata , J McKittrick
DOI: 10.1016/S0040-6090(00)01105-6
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摘要: Abstract Stoichiometric barium strontium titanate (Ba 0.5 Sr TiO 3 or BST) 220-nm thick thin films were deposited by pulsed laser ablation on SiO 2 /Si, RuO /Ta/SiO /Si and Pt/Ti/SiO substrates at 400°C. The weakly crystalline as-deposited. Crystallization was induced annealing the in range of 550–650°C. BST /c-Si presented wide cracks that promoted during process due to thermal expansion mismatch between (α =4×10 −6 °C −1 ) Pt =9×10 ). Smooth showing slightly cracked areas obtained substrates. ruthenium oxide coefficient is α =5.2×10 . A cross-sectional analysis ferroelectric/substrate interface showed for lower temperature (550°C) a mixed amorphous/nanocrystalline microstructure formed. For temperatures above 600°C randomly oriented polycrystalline material obtained. However, an amorphous layer 4–6 nm still remains substrate even after heat-treatments up 650°C. dielectric constant varied 30–325.