Electronic transport through very short and narrow channels constricted in GaAs by highly resistive Ga-implanted regions.

作者: Y. Hirayama , T. Saku , Y. Horikoshi

DOI: 10.1103/PHYSREVB.39.5535

关键词:

摘要: … may occurif the reflection effect becomes large. In summary, transport properties of the extremely short and narrow channels constricted by Ga-implanted …

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