High‐spectral‐resolution pulsed photoluminescence study of molecular‐beam‐epitaxy‐grown GaAs/AlxGa1−xAs multi‐quantum‐well structures using a very‐low‐power tunable pulsed dye laser
作者： M. Naganuma , J. J. Song , Y. B. Kim , W. T. Masselink , H. Morkoç
DOI: 10.1063/1.337268
关键词:
摘要: Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine observed for the first time PLE spectra, both heavy-hole light-hole excitonic regions. Most of fine are considered to arise from monolayer fluctuations thicknesses GaAs wells. Dramatic changes line shapes peak positions PL spectra by applying selective detection spectroscopic techniques.
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