Low defect etching of patterns using plasma-stencil mask

摘要: Resist coating on the surface of a semiconductor wafer is removed by one-step process using anisotropic reactive ion etching through an apertured stencil disposed close to but spaced from resist-coated surface. The bombardment greatly enhances plasma etch rate in areas exposed apertures so that only are effectively etched during limited exposure time spite presence chemically gas between and other technique low resolution ideally suited for clearing resist atop fiducial marks used align with multiple wafers integrated circuit chip.