Copper alloy layer for integrated circuit interconnects

摘要: A method for forming a metal interconnect comprises providing dielectric layer on substrate within reaction chamber where the includes trench, conformally depositing barrier Cu—Al alloy copper to fill and planarizing form interconnect. The may be formed by sequential ALD or CVD deposition of an aluminum followed annealing process. Alternately, in-situ co-pulsing precursors.