Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density
作者： Sang-Su Ha , Jong-Woong Kim , Jeong-Won Yoon , Sang-Ok Ha , Seung-Boo Jung
DOI: 10.1007/S11664-008-0574-5
关键词:
摘要: The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density 2.5 × 104 A/cm2 at 423 K using flip-chip specimens comprised an upper Si chip lower bismaleimide triazine (BT) substrate. Electromigration failure the occurred complete consumption electroless Ni immersion Au (ENIG) underbump metallization (UBM) void formation cathode side bump. Finite element analysis computational simulations indicated crowding electrons in patterned Cu on side, whereas line BT substrate had relatively low flowing electrons. These findings were confirmed by experimental results. reliability joint superior to that Sn-37Pb.
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