A new condenser microphone in silicon

作者: J. Bergqvist , F. Rudolf

DOI: 10.1016/0924-4247(90)85023-W

关键词:

摘要: A diaphragm, machined in lightly doped silicon, is the principal component of a new capacitive microphone designed to operate with an external bias voltage. The concept aims towards design which can be highly miniaturized and fabricated at low cost IC- compatible technology. significant points are stray capacitances ( < 0.5 pF), large number ventilation holes back plate allowing small air gap (4 μm), integrated chamber. frequency response has been calculated using mechano-acoustical lumped parameter model. Finally, chips overall size 3 × 4 1.3 mm3 have preliminary measurements demonstrated open- circuit sensitivities between 1.4 13 mV/Pa, corresponding bandwidths 16 kHz.

参考文章(7)
Dietmar Hohm, Reimund Gerhard(‐Multhaupt), Silicon‐dioxide electret transducer Journal of the Acoustical Society of America. ,vol. 75, pp. 1297- 1298 ,(1984) , 10.1121/1.390738
R.L. Smith, B. Kloeck, N. De Rooij, S.D. Collins, The potential dependence of silicon anisotropic etching in KOH at 60°c Journal of Electroanalytical Chemistry. ,vol. 238, pp. 103- 113 ,(1987) , 10.1016/0022-0728(87)85168-9
A. Jornod, F. Rudolf, High-precision capacitative absolute pressure sensor Sensors and Actuators. ,vol. 17, pp. 415- 421 ,(1989) , 10.1016/0250-6874(89)80028-9
M. Royer, J.O. Holmen, M.A. Wurm, O.S. Aadland, M. Glenn, ZnO on Si integrated acoustic sensor Sensors and Actuators. ,vol. 4, pp. 357- 362 ,(1983) , 10.1016/0250-6874(83)85044-6
Eun Sok Kim, R.S. Muller, IC-Processed piezoelectric microphone IEEE Electron Device Letters. ,vol. 8, pp. 467- 468 ,(1987) , 10.1109/EDL.1987.26696
U.K. Mishra, J.F. Jensen, D.B. Rensch, A.S. Brown, W.E. Stanchina, R.J. Trew, M.W. Pierce, T.V. Kargodorian, Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits IEEE Electron Device Letters. ,vol. 10, pp. 467- 469 ,(1989) , 10.1109/55.43102
Preston V. Murphy, Kurt Hubschi, Subminiature hearing aid microphones international symposium on electrets. pp. 732- 737 ,(1985) , 10.1109/ISE.1985.7341565