Propagation properties of light in AlGaN/GaN quantum-well waveguides
作者： TN Oder , JY Lin , HX Jiang , None
DOI: 10.1063/1.1410359
关键词:
摘要: The dynamic properties of light propagation in AlGaN/GaN-based multiple-quantum-well waveguides have been investigated by time-resolved photoluminescence (PL) spectroscopy. were patterned with a fixed width 0.5 μm and length 500 using electron-beam lithography inductively coupled plasma dry etching. Our results reveal remarkable decrease the PL intensity as well an increase time delay temporal response location laser excitation spot on waveguide is varied. These can be understood terms polariton waveguides. From response, it has determined that speed generated polaritons, energy corresponding to transitions waveguides, approximately (1.26±0.16)×107 m/s. implications these waveguiding optical devices based group III-nitride semiconductors are discussed.
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