Doping Asymmetry Problem in ZnO: Current Status and Outlook
作者： Vitaliy Avrutin , Donald J Silversmith , Hadis Morkoç
DOI: 10.1109/JPROC.2010.2043330
关键词:
摘要: ZnO has gained considerable interest recently as a promising material for variety of applications. To large extent, the renewed in is fuelled by its wide direct band gap (3.3 eV at room temperature) and exciton binding energy (60 meV) making this material, when alloyed with, e.g., Cd Mg, especially attractive light emitters blue/ultraviolet (UV) spectral region. Unfortunately, with other wide-gap semiconductors, suffers from doping asymmetry problem, that n-type conductivity can be obtained rather easily, but p-type proved to formidable challenge. This problem (also dubbed ZnO) preventing applications light-emitting diodes potential laser diodes. In paper, we provide critical review current experimental efforts focused on achieving discuss proposed approaches which could possibly used overcome problem.
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