Dual damascene process for carbon-based low-K materials
作者： Li-chih Chao , Ming-Huei Lui , Chao-Cheng Chen , Chia-Shiung Tsai , Jen-Cheng Liu
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摘要: A method for forming a dual damascene structure in carbon-based, low-K material. The process begins by providing semiconductor having first metal pattern thereover, wherein the has barrier layer thereon. An organic dielectric is formed on layer, and hard mask layer. are patterned to form trench. second over bottom sidewalls of barc thereby filling via opening, preferably using photoresist mask. without faceting edges opening due etch removed etch. removed. third trench, through opening. trench filled with structure.
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