Encapsulation of vacuum sensors in a wafer level package using a gold-silicon eutectic
作者： J. Mitchell , G.R. Lahiji , K. Najafi
DOI: 10.1109/SENSOR.2005.1496570
关键词:
摘要: A vacuum package based on gold-silicon eutectic wafer bonding has been developed and evaluated using high sensitivity poly-Si Pirani sensors. Encapsulation of the devices was achieved by a silicon cap to device Au-Si solder at or above 390/spl deg/C in bonder. The encircled devices, providing an airtight seal. Strong bonds could be /spl ges/2.5 mu/m gold wafer, bond either film 0.5 less, thin patterned same dimensions as gold. gauges were encapsulated tested over several months. Devices packaged without getters produced initial pressures from 2 12 torr with leak/outgassing rates -0.073 80 torr/year. Nanogetters/spl trade/ provided ISSYS low 5 mtorr <10 mtorr/year.
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