Semiconductor device, RF-IC and manufacturing method of the same
作者： Toshinori Imai , Takeshi Saikawa , Yoshihiro Kawasaki , Yoshiyuki Okabe , Mitsuhiro Toya
DOI:
关键词:
摘要: Provided is a technology capable of reducing parasitic capacitance capacitor while the space occupied by capacitor. A stacked structure obtained forming, over composed lower electrode, insulating film and an intermediate another upper electrode. Since electrode has step difference, each distance between in region other than formation becomes greater that region. For example, brought into direct contact with region, not
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