作者: P. Huber , D. Manova , S. Mändl , B. Rauschenbach
DOI: 10.1016/S0257-8972(01)01652-8
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摘要: Abstract Using a cathodic arc, with shield to reduce the droplet rate, it is possible obtain homogeneous AlN films across substrates diameters up 10 cm by metal plasma immersion ion implantation and deposition (MePIIID). The film thickness varies less than 5%, as measured spectroscopic ellipsometry. For sample diameter of no major influence voltage on homogeneity was observed. However, for 6 same conditions at edge decreased more 33 50% pulse voltages 5 kV, respectively. Thus, geometry holder can have strong direction stream emanating from arc. Additionally, working pressure composition plays role in determining homogeneity, observed using Al Ti cathodes without background gas or nitrogen.