Direct observations of ion-implanted xenon marker layers in anodic barrier films on aluminium

摘要: Abstract Transmission electron microscopy of ultramicrotomed sections an aluminium substrate and the attached anodic film has been employed to reveal clearly implanted xenon marker layer within film. The position can be determined directly relatively precisely, without need for any indirect analytical techniques. However, depending on whether atoms are initially into metal or a preformed thin film, variation in resultant behaviour is observed. A normal uniform barrier- type formation observed when case implantation metal, more heavily flawed less current-efficient growth over area, accompanied by copious gas evolution. In latter case, transmission stripped reveals flaws as lighter finely textured spots with diameters up about 0.2 μm population density 1.5 × 10 13 m -2 . Anomalous also distribution metal. Thus, future work concerned relative mobilities migrating species contributing growth, necessary.