Transistors, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions
作者： Roland Awusie , Andrew R. Bicksler , Deepak Thimmegowda
DOI:
关键词:
摘要: Some embodiments include a transistor having first electrically conductive gate portion along segment of channel region and second the region. The is different composition than portion. method forming semiconductor construction. First material metal-containing are formed over NAND string. An opening through material, lined with dielectric. Second provided within to form transistor. select device coupled
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