A fully suspended, movable, single-crystal silicon, deep submicron MOSFET for nanoelectromechanical applications
作者： J.Jason Yao , Susanne C. Arney , Noel C. MacDonald
DOI: 10.1016/0924-4247(94)85033-X
关键词:
摘要: Abstract We have fabricated a novel, fully suspended, movable, deep-submicron single-crystal-substrate silicon (SCS) N-MOSFET using silicon-on-insulator (SOI) technology. The SOI technology has been developed and characterized for making 100 nm scale SCS cantilevers by oxidation mechanical beams tips (COMBAT). COMBAT FET designed specifically integration with nanoelectromechanical sensor other applications. entire process flow simultaneously fabricating tunneling as well the requires only five masking steps including initial electron-beam lithography step. device design offers unique capability transistors to comprise front-end electronics unit in suspended integrated nanometer-displacement system reduced parasitic losses.
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