作者: Jorj I. Owen , Wendi Zhang , Dominik Köhl , Jürgen Hüpkes
DOI: 10.1016/J.JCRYSGRO.2012.01.043
关键词:
摘要: This work endeavors to develop a better understanding of the growth aluminum doped zinc oxide (ZnO:Al) films under relevant sputtering conditions that after etching yield good light trapping structures for use in thin-film silicon solar cells. The and characteristics grown on various substrates, including texture etched ZnO:Al, ZnO single crystals, glass, are examined. ZnO:Al is shown grow quasi-epitaxially textured surface. While new maintains topographical features, similar roughness, c-axis orientation, sites craters formed during altered. inclusion buffer layer between reset c-axis. Growth glass indicate columnar oriented grains primarily Zn-terminated. A model proposed explain observed differences substrates.