Latent tracks of swift Bi ions in Si 3 N 4

作者: Vuuren Van , A Ibrayeva , RA Rymzhanov , A Zhalmagambetova , JH O'Connell

DOI: 10.1088/2053-1591/AB72D3

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摘要: Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeV Bi ions were studied using TEM XRD techniques, MD simulation. Experimental results are considered terms the framework a "core-shell" inelastic thermal spike (i-TS) model. The average radius determined means electron microscopy coincides with that deduced from computer modelling is similar to core size predicted i-TS Indirect (XRD) techniques give larger which consistent integral nature signal collected probed volume irradiated material.

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