Method for patterning silicon dioxide with high resolution in three dimensions
作者： Kailash C. Jain , Bernard A. MacIver
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摘要: A method is provided for selectively etching ion-implanted silicon dioxide. masked dioxide layer exposed to an ion beam of controlled dose and energy. The mask removed the brought in contact with aqueous ammoniacal hydrogen peroxide solution which preferentially removes ion-bombarded region minimal unimplanted
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