Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS2
作者： Ram S. Katiyar , Majid Ahmadi , Anand P. S. Gaur , Satyaprakash Sahoo , Maxime J.-F. Guinel
DOI: 10.1021/JP402509W
关键词:
摘要: We report on the temperature dependence of in-plane E2g and out-of-plane A1g Raman modes in high-quality few-layer MoS2 (FLMS) prepared using a high-temperature vapor-phase method. The materials obtained were investigated transmission electron microscopy. frequencies these two phonon found to vary linearly with temperature. first-order coefficients for E12g be (1.32 1.23) × 10–2 cm–1/K, respectively. thermal conductivity suspended FLMS at room was estimated ∼52 W/mK.
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