Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

摘要: Zr films (130 nm) were deposited on a 6H-SiC substrate at room temperature by sputter deposition. The interface solid-state reactions due to high vacuum thermal annealing between 600 °C and 850 for 30 min investigated Rutherford backscattering spectrometry (RBS) X-ray diffraction (XRD). surface morphology evolution was quantified using atomic force microscopy (AFM) secondary electron (SEM). RBS analysis indicated that the as-deposited sample had thin intermixed region consisting of ZrC Zr2Si. phases formed each identified XRD analysis. At temperatures 700 above, reacted with SiC mixed layer carbide (ZrC) silicides (Zr2Si, ZrSi2 Zr5Si3). from SEM revealed homogeneous which varied appearance clusters surface. AFM RRMS roughness decreased value 1.65 nm after then increased higher coalescing granules in layer. It has also been demonstrated obtained experimental results have good correlation ternary EHF model regards initial interface.