Bias enhanced nucleation of diamond thin films in a modified HFCVD reactor
作者： T. Ižák , M. Marton , M. Varga , M. Vojs , M. Veselý
DOI: 10.1016/J.VACUUM.2009.04.065
关键词:
摘要: Abstract In this study we investigated the nucleation of synthetic diamond thin films on Si substrates by double bias enhanced Hot Filament Chemical Vapour Deposition (HFCVD) method. First, influence voltage and secondly time under different voltages. The was varied from −120 V up to −220 V as well changed 30 120 min in order obtain optimized conditions for following growth continuous layer. Samples were analyzed Scanning Electron Microscopy (SEM) Raman Spectroscopy. SEM used determination cluster sizes their distribution surface, while Spectroscopy analysis carbon phases.
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