作者: L. Y. Zhang , C. Y. Wang , Y. G. Wei , X. Y. Liu , D. Davidović
DOI: 10.1103/PHYSREVB.72.155445
关键词:
摘要: We investigate spin-polarized electron tunneling through ensembles of nanometer-scale Al grains embedded between two Co reservoirs at 4.2 K, and observe tunneling-magnetoresistance (TMR) effects from spin precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time $({T}_{2}^{\ensuremath{\star}})$ measured using effect is order ns. dephasing attributed to local fields. Dephasing process does not destroy TMR, which strongly asymmetric with bias voltage. TMR explained by relaxation dwell times.