Study of Polarization and Relaxation on Pb(Zr,Ti)O3 Thin Films by Scanning Probe Microscopy
作者： Jian Shen , Huai Wu Zhang
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.463-464.1484
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摘要: Polycrystalline Pb(Zr0.55T0.45)O3thin film was deposited on Pt/Ti/SiO2Si(100) by radio-frequency-magnetron sputtering method, the writing of charge bits and polarization relaxation phenomena surface PZT thin studied Kelvin probe force microscopy Piezoresponse microscopy, respectively. It is found that potential negative are higher than those corresponding positive ones, accumulates remarkably in high vacuum but relax more quickly. The domain images (contrast) reveal magnitude determined orientation each grain, which proved Ref 14. Taking polarized area as whole, show state some grain can maintain at leas¬t 105s, other disappear relatively
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