Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate.

摘要: We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to the properties nanofabricated structures. The anomalous thickness observed after process is linked impact LAO substrate. Micro-Raman (μ-Raman) spectroscopy employed demonstrate presence two regimes depending applied bias. show that partial total etching monolayer can be achieved tuning bias voltage during LAO. Finally, complete compositional scanning electron energy dispersive spectroscopy.