作者: Wenshan Cai , Justin S. White , Mark L. Brongersma
DOI: 10.1021/NL902701B
关键词:
摘要: CMOS compatible electrooptic plasmonic modulators are slated to be key components in chip-scale photonic circuits. In this work, we investigate detailed design and optimization protocols for that suitable free-space coupling on-chip integration. The metallic structures the proposed devices offer simultaneous electric optical functions. resonance-enhanced nonlinear interaction submicrometer-footprint of these meet stringent requirements future modulators, allowing high-speed operation (>100 GHz) with a decent modulation depth (>3 dB) moderate insertion loss (<3 at very low swing voltage (∼1 V) power dissipation fJ/bit). realization appears feasible current materials lithographic techniques.