作者: Huajun Sun , Saihong Duan , Xiaofang Liu , Dawei Wang , Huiting Sui
DOI: 10.1016/J.JALLCOM.2016.02.008
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摘要: Abstract Lead-free Ba0.98Ca0.02Zr0.02Ti0.98O3-xmol% MnO2 (BCZT-xMn) (x = 0.1, 0.2, 0.3, 0.4, 0.5) ceramics were prepared by conventional solid-state reaction method and the effects of doping content sintering temperature on microstructure electrical properties BCZT studied. The samples with all contents exhibit pure perovskite structure similar Curie approximately 120 °C. Among all, sample 0.3 mol. % sintered at 1400 °C exhibits improved ferroelectricity a relatively high remnant polarization (Pr) low coercive electric field (Ec) 15.7 μC/cm2 180 V/mm, respectively, which can be attributed to fact that an appropriate does favor grain growth, favorable effect domain motion. Accordingly, excellent piezoelectric property coefficient (d33) 308 pC/N obtained. Besides, shows dielectric loss (tanδ) 1.04%. As result, BCZT-xMn ceramic potential used in memory transformer applications.