引用次数
引用: 1,560
H-指数: 22
I10-指数 : 42
出版物: 299
Particle-Swarm Optimization in Antenna Design: Optimization of Log-Periodic Dipole Arrays
M. Pantoja , A. Bretones , F. Ruiz , S.G. Garcia
IEEE Antennas and Propagation Magazine 49 ( 4) 34 -47
39
2007
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
A Godoy , F Ruiz , C Sampedro , F Gámiz
Solid-state Electronics 51 ( 9) 1211 -1215
15
2007
Quantum corrected Ensemble Monte Carlo simulation of UTB-DGSOI. Contribution of Volume Inversion and Inter-Subband Modulation effects
C. Sampedro , F. Gamiz , A. Godoy , F. Ruiz
international soi conference 79 -80
2006
Monte Carlo simulation of low-field mobility in strained double gate SOI transistors
F Gámiz , A Godoy , C Sampedro , N Rodriguez
international workshop on computational electronics 7 ( 3) 205 -208
3
2008
Monte Carlo simulation of nanoelectronic devices
F. Gamiz , A. Godoy , L. Donetti , C. Sampedro
Journal of Computational Electronics 8 ( 3) 174 -191
5
2009
Flexible Laser-Reduced Graphene Oxide Thermistor for Ubiquitous Electronics
Diego P. Morales , Noel Rodriguez , Francisco G. Ruiz , Almudena Rivadeneyra
ALLSENSORS 2018, The Third International Conference on Advances in Sensors, Actuators, Metering and Sensing 1 -3
2018
SIW Cavity-Backed Antenna Array Based on Double Slots for mmWave Communications
Pablo Padilla , Ángel Palomares-Caballero , Cleofás Segura-Gómez , Bilal Hammu-Mohamed
Applied Sciences 11 ( 11) 4824
9
2021
Influence of alloy disorder scattering on the hole mobility of SiGe nanowires
Celso Martinez-Blanque , Francisco G. Ruiz , Andres Godoy , Enrique G. Marin
Journal of Applied Physics 116 ( 24) 244502
3
2014
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas , Enrique G. Marin , Alejandro Toral-Lopez , Francisco G. Ruiz
npj 2D Materials and Applications 3 ( 1) 1 -7
13
2019
Resistive Switching in Graphene Oxide
Francisco J. Romero , Alejando Toral , Alberto Medina-Rull , Carmen Lucia Moraila-Martinez
Frontiers in Materials 7
35
2020
On the influence of the back-gate bias on InGaAs Trigate MOSFETs
Enrique G. Marin , Francisco G. Ruiz , Andres Godoy , Jose M. Gonzalez-Medina
joint international eurosoi workshop and international conference on ultimate integration on silicon 230 -233
2016
Computationally efficient analytic charge model for III-V cylindrical nanowire transistors
Mohit D. Ganeriwala , Enrique G. Marin , Francisco G. Ruiz , Nihar R. Mohapatra
joint international eurosoi workshop and international conference on ultimate integration on silicon
2
2018
A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
Alberto Medina-Rull , Francisco Pasadas , Enrique G. Marin , Alejandro Toral-Lopez
IEEE Access 8 209055 -209063
17
2020
Charge and Capacitance Compact Model for III-V Quadruple-Gate FETs With Square Geometry
Mohit D. Ganeriwala , Enrique G. Marin , Francisco G. Ruiz , Nihar R. Mohapatra
2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)
2019
Memcapacitor emulator based on the Miller effect
Francisco J. Romero , Diego P. Morales , Andres Godoy , Francisco G. Ruiz
International Journal of Circuit Theory and Applications 47 ( 4) 572 -579
16
2019
Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS 2 FETs
Keshari Nandan , Chandan Yadav , Priyank Rastogi , Alejandro Toral-Lopez
ieee electron devices technology and manufacturing conference 1 -4
1
2020
Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs
Mohit D. Ganeriwala , Francisco G. Ruiz , Enrique G. Marin , Nihar R. Mohapatra
ieee electron devices technology and manufacturing conference
2020
Accurate modeling of Metal/HfO2/Si capacitors
Francisco G. Ruiz , Andrés Godoy , Luca Donetti , I. M. Tienda-Luna
Journal of Computational Electronics 7 ( 3) 155 -158
3
2008
A compact model for III–V nanowire electrostatics including band non-parabolicity
Mohit D. Ganeriwala , Francisco G. Ruiz , Enrique G. Marin , Nihar R. Mohapatra
Journal of Computational Electronics 18 ( 4) 1229 -1235
2019
Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors
Mohit D. Ganeriwala , Chandan Yadav , Francisco G. Ruiz , Enrique G. Marin
IEEE Transactions on Electron Devices 64 ( 12) 4889 -4896
10
2017
Andres Godoy Francisco Gamiz Enrique G. Marin Isabel M. Tienda Luna Luca Donetti CARLOS SAMPEDRO MATARIN Noel Rodriguez José María González-Medina Salvador G. Garcia Juan B. Roldán David Jiménez Francisco Jiménez-Molinos Max C. Lemme SATENDER KATARIA Juan M Rius Blanca Biel Valin Raul Antonio Garcia-Loureiro Peter Haring Bolivar