Brij Mohan Arora
机构: Visiting Professor , Indian Institute of Technology Bombay
每年引用次数
引用次数
引用: 2,989
H-指数: 27
I10-指数 : 100
出版物: 384
Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique
S. Subramanian , B. M. Arora , A. K. Srivastava , G. Fernandes
Journal of Applied Physics 74 ( 12) 7618 -7620
17
1993
A new mesa-etching technique for gallium arsenide
B. M. Arora , V. T. Karulkar , S. Guha
Journal of Materials Science 8 ( 4) 611 -611
3
1973
Observation of a 0.7eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy
S. Dhar , N. Halder , J. Kumar , B. M. Arora
Applied Physics Letters 85 ( 6) 964 -966
20
2004
Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1−x∕GaAs (x⩽0.06) heterostructure grown using liquid phase epitaxy
V. K. Dixit , Bhavtosh Bansal , V. Venkataraman , H. L. Bhat
Journal of Applied Physics 96 ( 9) 4989 -4997
20
2004
Photoreflectance spectroscopy with white light pump beam
Sandip Ghosh , B. M. Arora
Review of Scientific Instruments 69 ( 3) 1261 -1266
10
1998
APPLICATION OF A FOURIER TRANSFORM BASED FILTERING TECHNIQUE TO IMPROVE SIGNAL-TO-NOISE RATIO IN MODULATION SPECTROSCOPY EXPERIMENTS
Sandip Ghosh , B. M. Arora
Review of Scientific Instruments 68 ( 8) 3260 -3261
3
1997
Photoreflectance and photoluminescence spectroscopy of low‐temperature GaAs grown by molecular‐beam epitaxy
S. Sinha , B. M. Arora , S. Subramanian
Journal of Applied Physics 79 ( 1) 427 -432
7
1996
Origin of an E 3 -like defect in GaAs and Ga As 1 − x Sb x alloys
Prakash A. Murawala , Vijay A. Singh , S. Subramanian , S. S. Chandvankar
Physical Review B 29 ( 8) 4807 -4810
14
1984
Deep‐level admittance spectroscopy of DX centers in AlGaAs:Sn
S. Chakravarty , S. Subramanian , D. K. Sharma , B. M. Arora
Journal of Applied Physics 66 ( 8) 3955 -3958
9
1989
Deep level transient spectroscopy measurements of silicon heterojunction cells
Sanchit Khatavkar , C. V. Kannan , Vijay Kumar , P. R. Nair
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2716 -2718
2017
Modified STC Correction Procedure for Assessing PV Module Degradation in Field Surveys
Hemant K. Singh , R. Dubey , S. Zachariah , K. L. Narasimhan
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 1995 -1999
1
2017
Structure of twins in GaAs nanowires grown by the vapour–liquid–solid process
R. Banerjee , A. Bhattacharya , A. Genc , B. M. Arora
Philosophical Magazine Letters 86 ( 12) 807 -816
19
2006
High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy
S. Saravanan , K. Jeganathan , K. Baskar , J. Kumar
Japanese Journal of Applied Physics 36 ( Part 1, No. 6A) 3385 -3388
10
1997
Orientation dependence of surface states in native oxide-GaAs MOS structures
A. M. Narsale , R. Pratap , B. M. Arora
Journal of Materials Science Letters 8 ( 5) 514 -516
2
1989
Imaging of series resistance and ideality factor in c-Si solar cells
A. K. Sharma , Hardik Kalasua , Sandeep Kumbhar , K. L. Narasimhan
2016 3rd International Conference on Emerging Electronics (ICEE) 1 -3
2016
Barrier height of Au onn‐GaAs1−xSbxdiodes
S. Subramanian , P. A. Murawala , S. S. Chandvankar , B. M. Arora
Applied Physics Letters 41 ( 4) 357 -359
6
1982
Non-Destructive Technique for Measurement of Quantum Efficiency of Encapsulated Solar Cells in PV Modules
K. Naga Bhavya Jyothi , Narendra Shiradkar , B. M. Arora , K. L. Narasimhan
photovoltaic specialists conference
1
2019
Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique
M. Abul Hossion , B. M. Arora
Crystals 10 ( 4) 237
2
2020
Facet coating of diode laser for high-power and high-reliable operation
C. J. Panchal , S. N. Mistry , K. M. Patel , B. M. Arora
19th Congress of the International Commission for Optics: Optics for the Quality of Life 4829 18 -19
1
2003
Current transport in a‐Si:Ge alloy Schottky barriers
D. K. Sharma , K. L. Narasimhan , Shailendra Kumar , B. M. Arora
Journal of Applied Physics 65 ( 5) 1996 -1999
12
1989