Doping silicon nanocrystals with boron and phosphorus
作者： Xiaodong Pi
DOI: 10.1155/2012/912903
关键词: Electronic properties 、 Phosphorus 、 Nanometre 、 Doping 、 Nanotechnology 、 Boron 、 Materials science 、 Silicon nanocrystals
摘要: The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress the simulation B- P-doped Si NCs has led to improved explanation for Band P-doping-induced changes optical NCs. This is mainly enabled comprehensive investigation on locations B P electronic I remarks implications newly gained insights Continuous research advance understanding doping with envisioned.
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