Resistometric Mapping using a Scanning Tunneling Microscope
DOI: 10.1557/PROC-500-15
关键词: Scanning probe microscopy 、 Optoelectronics 、 Characterization (materials science) 、 Microstructure 、 Electrical conductor 、 Electrochemical scanning tunneling microscope 、 Materials science 、 Quantum tunnelling 、 Scanning tunneling microscope 、 Electrical resistivity and conductivity
摘要: We present a method whereby spatial variations in the resistivity of bulk conductive specimens may be detected on same scale as microstructural from which they arise. This technique, new development scanning tunneling potentiometry, offers significant benefits for characterization and investigation microstructure/resistivity relationships metallic materials.
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