作者: Craig Jon Hawker , Willi Volksen , Richard Anthony DiPietro , Victor YeeWay Lee , Robert Dennis Miller
DOI:
关键词: Integrated circuit 、 Polymer 、 Materials science 、 Optoelectronics 、 Substrate (printing) 、 Electronic engineering 、 Dielectric 、 Three dimensional architecture 、 Matrix (mathematics) 、 Porosity 、 Process (computing)
摘要: The invention relates to a process for forming an integrated circuit device comprising (i) substrate; (ii) metallic lines positioned on the substrate and (iii) dielectric material lines. comprises porous organic polysilica.