Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope
作者： D.S.H. Chan , K.L. Pey , J.C.H. Phang
DOI: 10.1109/16.223700
关键词: Experimental data 、 Set (abstract data type) 、 Semiconductor 、 Optics 、 Chemistry 、 Scanning electron microscope 、 Function (mathematics) 、 Energy (signal processing) 、 Curve fitting 、 Cathodoluminescence
摘要: Five semiconductor-related parameters have been extracted simultaneously from experimental cathodoluminescence output data collected as a function of electron-beam energy. The extraction technique is based on recently proposed three-dimensional computer model cathodoluminescence. It also uses curve fitting the minimization an area error criterion. Computational results show that unique and unambiguous set parameter values can be obtained for each points using algorithm suggested. >
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